The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.
|Operating voltage||5 volt|
|Max. power||100 mW|
|Operating temperature||-550 C to 100 o C|
|Application||Position sensing, angular position of motor|