FDV303N - N-Channel Digital FET 25V 0.68A 0.45Ohm SMD SOT-23-3

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SKU:
042-FDV303N
Manufacturer Part No:
FDV303N
₹6.49 inc. GST
₹5.50 ex. GST

Description

These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Resources
Datasheet
 

Extra Information

Manufacturer:
ON Semiconductor
Case/Package:
SOT-23-3
Mount:
Surface Mount
Number of Pins:
3
Gate to Source Voltage (Vgs):
8 V
Drain to Source Resistance:
450 mohm
Drain to Source Voltage (Vdss):
25 V
Current Rating:
680 mA
Continuous Drain Current (ID):
680 mA
Max Operating Temperature:
150 C
Input Capacitance:
50 pF
Voltage Rating (DC):
25 V
Min Operating Temperature:
-55 C
RoHS:
Compliant

Warranty Information

All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.