Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Resources
Extra Information
Brand:
Infineon Technologies
Case/Package:
DPAK
Mount:
Surface Mount
Number of Pins:
3
Drain to Source Breakdown Voltage:
55 V
Current Rating:
17 A
Drain to Source Resistance:
65 mohm
Drain to Source Voltage (Vdss):
55 V
Dual Supply Voltage:
55 V
Element Configuration:
Single
Fall Time:
29 ns
Gate to Source Voltage (Vgs):
16 V
Input Capacitance:
480 pF
Max Junction Temperature (Tj):
175 C
Max Operating Temperature:
175 C
Max Power Dissipation:
45 W
Nominal Vgs:
2 V
Min Operating Temperature:
-55 C
Number of Channels:
1
Rds On Max:
65 mohm
Power Dissipation:
45 W
Resistance:
80 mohm
Rise Time:
74 ns
Recovery Time:
90 ns
Threshold Voltage:
2 V
Voltage Rating (DC):
55 V
Warranty Information
All the products supplied by Evelta are genuine and original. We offer 14 days replacement warranty in case of manufacturing defects. For more details, please visit our cancellation and returns page.
